Published April 16, 1982
| Version v1
Journal article
Electrical and optical characteristics of a Schottky barrier on a cleaved surface of the layered semiconductor InSe
Description
Forward current-voltage characteristics at various temperatures and the frequency dependence of barrier capacitance in Au/InSe Schottky barrier diodes are investigated in detail. The origin of an excess temperature T0 and the effect of electron traps on the barrier capacitance are discussed. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 70
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 615-621
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 13704117
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; GOLD; INDIUM SELENIDES; LAYERS; LOW TEMPERATURE; MEDIUM TEMPERATURE; PERMITTIVITY; PHOTOCONDUCTIVITY; PHOTODIODES; PHOTOELECTRIC EFFECT; PHOTOVOLTAIC CELLS; SCHOTTKY BARRIER DIODES; TEMPERATURE DEPENDENCE; TRAPS
- Descriptors DEC
- CHALCOGENIDES; DIELECTRIC PROPERTIES; DIRECT ENERGY CONVERTERS; ELECTRICAL PROPERTIES; ELEMENTS; INDIUM COMPOUNDS; METALS; PHOTOELECTRIC CELLS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TRANSITION ELEMENTS