Electron spin resonance properties of amorphous silicon-based alloy films at high temperatures

Some important properties of high temperature ESR of doped (B and P) and undoped a-Si1-x Cx:H and a-Si1-xNx:H alloy films are investigated. The ESR measurements were continuously performed in high temperature annealing process. The experimental results results show that: (1) For B-doped a-Si1-xCx:h and a-Si1-xCx:h and a-Si1-x:H films, a ESR absorption line can be decomposed to a broad (g1=2.005) and a narrow (g2=2.010) ESR absorption lines, g1 and g2 correspond to the contributions of Si dangling bonds and of holes in the valence band tail states, respecitively. (2) The drop of hole density in the valence band tail states is faster than Si30 with rising temperature. The hold density in the valence band tail states is further larger than Si30 when temperature is low. However, the contribuition of Si30 is the main one when temperature is very high