Phototransistor response under a neutron fluence

The purpose of this communication is to show some effects on a bipolar phototransistor after it has been under a neutron fluence. Unlike a transistor, a phototransistor is designed so that the collector has a large area and consequently it has a higher radiation detection probability. Then, it is possible to have a certain number of interactions so that any changes in the internal structure of the phototransistor can be observed after a neutron irradiation. If a phototransistor is under a certain spectra of neutron fluence the interaction depends on the cross section of the either silicon chip or its encapsulation, and recoil protons could be the charged particle responsible for changes in the semiconductor structure. Furthermore, neutron irradiation could give to the device a state of vanishing in its electrical characteristic which can be performed tracing the current versus voltage curve (I x V). The experimental arrangement basically consists of a photonic device, a neutron-gamma radiation source and a Flip-Flop electrometer second generation (EFF-2G). One of the main parameters of evaluation was the phototransistor dark current. In fact, the first results demonstrate that when the phototransistor is neutron irradiated there is a significant variation in its I x V characteristic curve. (author)