Low-temperature deposition of α-Al2O3 film using Al+α-Al2O3 composite target by radio frequency magnetron sputtering
Creators
- 1. School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640 (China)
Description
The realization of low temperature deposition of α-Al2O3 films is important for expanding its application in cutting tools, diffusion barrier and anti-oxidization coating. Here, the alumina films were deposited on Si(100) substrates by radio frequency magnetron sputtering using various targets of Al, α-Al2O3, and Al + 15 wt% α-Al2O3 composite. The elemental composition, phase constitution, microstructure, morphology and mechanical property of the as-deposited films were characterized by various techniques. The results show that the film deposited from the α-Al2O3 target is composed of amorphous and α-Al2O3, while the single phase α-Al2O3 film was successfully deposited by reactively sputtering the composite target at a substrate temperature of 550 °C. The hardness of the α-Al2O3 film deposited from Al+α-Al2O3 composite target was measured as ∼23.8 GPa. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1591/ab1c95Additional details
Identifiers
Publishing Information
- Journal Title
- Materials Research Express (Online)
- Journal Volume
- 6
- Journal Issue
- 8
- Journal Page Range
- [8 p.]
- ISSN
- 2053-1591
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52006070
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; CUTTING TOOLS; DEPOSITION; DEPOSITS; FILMS; MAGNETRONS; RADIOWAVE RADIATION; SPUTTERING
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; TOOLS