Published April 1997 | Version v1
Journal article

Preparation of buffer layers for HTS materials by MOCVD

  • 1. International Superconductivity Technology Center (ISTEC), Tokyo (Japan). Superconductivity Research Lab.

Description

CeO2 buffer layers were prepared by metal-organic chemical vapor deposition, (MOCVD) on (100) yttria-stabilized zirconia, (YSZ) substrates. The as-grown films exhibited (100) preferential orientation. The film surface consisted of grains with feature sizes of several 10's of nm. Post-deposition annealing at 800-1100 C improved the surface roughness and the crystalline quality. The surface was analysed by scanning electron microscopy and atomic force microscopy. The crystallinity was investigated by X-ray diffraction, (θ/2θ-scan, rocking curves) and pole figures. (orig.)

Additional details

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
251
Journal Issue
1-2
Journal Page Range
p. 310-313.
ISSN
0925-8388
CODEN
JALCEU

Conference

Title
Growth mechanisms - interfaces - multilayers as part of the spring meeting of the European Materials Research Society (E-MRS).
Acronym
Symposium F on high temperature superconductor thin films
Dates
4-7 Jun 1996.
Place
Strasbourg (France).