Published September 1, 1978
| Version v1
Journal article
Investigations of physical properties of MOS-structure heavy ion counters
Creators
- 1. V.G. Khlopin Radium Institute, Roentgen str. 1, Leningrad, USSR
Description
Physical properties of the MOS-structure n-type silicon breakdown heavy ion counters with 50 mm2 sensitive area were investigated. Detection efficiency is approximately 100%. Heavy ion registration energy threshold is (22 +- 2) MeV/mg cm2 in silicon dioxide. Operation resource for the fission fragment registration does not exceed 3 X 106 fragm/cm2. The counters have good stability and have no background when irradiated with light charged particles. (Auth.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods
- Journal Volume
- 154
- Journal Issue
- 3
- Series
- Nucl. Instrum. Methods.
- Journal Page Range
- 471-476
- ISSN
- 0029-554X
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 10442048
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- BREAKDOWN; CALIFORNIUM 252; EFFICIENCY; FISSION FRAGMENT DETECTION; N-TYPE CONDUCTORS; SI SEMICONDUCTOR DETECTORS; SILICON OXIDES
- Descriptors DEC
- ACTINIDE NUCLEI; ALPHA DECAY RADIOISOTOPES; CALIFORNIUM ISOTOPES; CHALCOGENIDES; EVEN-EVEN NUCLEI; HEAVY NUCLEI; ISOTOPES; MEASURING INSTRUMENTS; NUCLEI; OXIDES; OXYGEN COMPOUNDS; RADIATION DETECTION; RADIATION DETECTORS; RADIOISOTOPES; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; YEARS LIVING RADIOISOTOPES