Published 1998
| Version v1
Miscellaneous
Aging mechanisms of InGaN/AlGaN/GaN light-emitting diodes during a work at high currents
Creators
- 1. Moscow Institute of Steel and Alloys, Moscow (Russian Federation)
- 2. M. V. Lomonosov Moscow State University, Moscow (Russian Federation)
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- thin films
Publishing Information
- Imprint Title
- Abstracts of The Third European GaN Workshop EGW-3
- Imprint Pagination
- 97 p.
- Journal Page Range
- p. 78
Conference
- Title
- 3. European GaN Workshop EGW-3
- Dates
- 22-24 Jun 1998
- Place
- Warsaw (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31064588
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- AGING; ALUMINIUM COMPOUNDS; CRYSTAL DEFECTS; ELECTRICAL PROPERTIES; EMISSION SPECTRA; GALLIUM COMPOUNDS; GALLIUM NITRIDES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; MEETINGS; NITRIDES; THIN FILMS
- Descriptors DEC
- CRYSTAL STRUCTURE; FILMS; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTRA
Optional Information
- Notes
- 2 refs