Peculiarities of defect formation in sphalerite boron nitride from resonant study data

Temperature dependences of the Young modulus and internal friction of sphalerite boron nitride produced by sintering of BNsph crystals of the size 20-50 μm under the pressures of 7.5-8 GPa and at the temperature of 2800 K have been studied. The nature of high-temperature background of internal friction and distortion of E(T) diagrams, which consists in the movement of dislocations under the effect of external oscillating voltage and different degree of their fixing by point defects, is ascertained. Activation energy of the background has the minimum value (0.4 eV) in case of the highest degree of dislocation fixing and it increases up to 0.8 eV during their block out