An analytic approximation to the peaks obtained from Ge(Li) and Si(Li) detectors used in gamma spectrum analysis

A new approach for the analytical approximation to the peaks obtained from Ge(Li) and Si(Li) detectors is described. The form of the analytical function involves three components viz., Gaussian, distorting and background functions. For the representation of the distorting effects a different analytical form is proposed which is added to the pure Gaussian and polynomial background. The validity of the form proposed is investigated by means of the program CAASA developed for high precision gamma spectroscopy. The improvement achieved by this approach is compared with some results reported and published earlier. (orig.)