Published February 1993 | Version v1
Journal article Metadata-only

Effect of gallium doping on the properties of Pb1-xGexTe solid solutions

Creators

  • 1. Moskovskij Gosudarstvennyj Univ., Moscow (Russian Federation)

Description

Effect of gallium doping on some properties of Pb1-xGexTe solid solutions is studied. Measurements of temperature dependences of specimen specific resistance under screening conditions and at illuminating using thermal source have shown, that activation energy in x=0.11 composition specimen-constitutes approx. 340 MeV in x=0.06 composition specimen - approx. 280 MeV and in PbTe(Ga) approx. 140 MeV. The relative value of photoconductivity signal reduces with x growth

Additional details

Additional titles

Original title (Russian)
Влияние легирования галлием на свойства твердых растворов Пб

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
27
Journal Issue
2
Journal Page Range
p. 351-354.
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
26043817
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ACTIVATION ENERGY; CRYSTAL DOPING; ENERGY GAP; FERMI LEVEL; GALLIUM ADDITIONS; GERMANIUM TELLURIDES; HALL EFFECT; LEAD TELLURIDES; MONOCRYSTALS; PHOTOCONDUCTIVITY; SOLID SOLUTIONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K
Descriptors DEC
CHALCOGENIDES; CRYSTALS; DISPERSIONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY; ENERGY LEVELS; GERMANIUM COMPOUNDS; HOMOGENEOUS MIXTURES; LEAD COMPOUNDS; MIXTURES; PHYSICAL PROPERTIES; SOLUTIONS; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE