Fabrication of CdS (In)/p-Si heterojunction photovoltaic solar Cells and Radiation effects on performance

The efficiency and radiation resistance of solar cells are graded up. They are, then, fabricated in the form n-CdS (In)/ p-Si heterojunction cells by electron beam evaporation of a stoichiometric mixture of CdS and In to make a film on a p-Si single crystal wafers with thickness 100 MU m and resistivity 1.5 at a temperature 473 k degree. The short-circuit current density (J), open-circuit voltage (V), fill factor (F F) and conversion efficiency under AM 1 are 20 m A/cm2 0.49 V. 0.71 and 6% respectively. The cells were exposed to different electron doses(electron beam accelerator of energy 1.5 MeV, and beam intensity 25 m A) and. The cells performance parameters are measured and discussed before and after irradiation