High-fluence implantations of Ge into <111>Si

The annealing of radiation damage produced by room-temperature and 3000C implantations of 60 keV 72Ge to fluences greater than 1016/cm2 into [111] Si was investigated by backscattering and channeling analyses of 280 keV alpha particles. Implantation at room-temperature produced an amorphous layer which only partially reordered after anneal at 8500C. However, implantation at 3000C did not produce an amorphous layer, and after annealing at 10000C, resulted in an essentially perfect crystalline alloy of Si-Ge having a uniform Ge concentration of 6 at.% over a depth of 1000 A. These results are also consistent with optical reflectivity data obtained on the sample surfaces in the 3-5.5 eV spectrum. (orig.)