Published October 15, 2007 | Version v1
Journal article

On the processing-structure-property relationship of ITO layers deposited on crystalline and amorphous Si

  • 1. University of Oslo, Department of Physics, P.O Box 1048, Blindern, Oslo (Norway)
  • 2. University of Oslo, Centre for Material Science and Nanotechnology, P.O. Box 1126, Blindern, NO-0318 Oslo (Norway)
  • 3. Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway)
  • 4. University of Oslo, Department of Chemistry, P.O Box 1033, Blindern, Oslo (Norway)
  • 5. University of Surrey, The Surface Analysis Laboratory, School of Engineering, Guildford, Surrey, GU2 7XH (United Kingdom)

Description

Indium-tin-oxide (ITO) antireflection coatings were deposited on crystalline Si (c-Si), amorphous hydrogenated Si (a-Si:H) and glass substrates at room temperature (RT), 160 deg. C and 230 deg. C by magnetron sputtering. The films were characterised using atomic force microscopy, transmission electron microscopy, angle resolved X-ray photoelectron spectroscopy, combined with resistance and transmittance measurements. The conductivity and refractive index as well as the morphology of the ITO films showed a significant dependence on the processing conditions. The films deposited on the two different Si substrates at higher temperatures have rougher surfaces compared to the RT ones due to the development of crystallinity and growth of columnar grains

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2007.03.091

Additional details

Identifiers

DOI
10.1016/j.tsf.2007.03.091;
PII
S0040-6090(07)00423-3;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
515
Journal Issue
24
Journal Page Range
p. 8539-8543
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
1. international symposium on transparent conducting oxides
Dates
23-26 Oct 2006
Place
Crete (Greece)

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.