Published December 1993
| Version v1
Journal article
On the methods of epitaxial boundaries exposure in hetero-compositions on A3B5
Description
Results are presented of using selective etching and anode oxidation for revealing epitaxial transitions in heteroepitaxial structures (HES) on GaAs and InP. It is shown that the etchant of composition of K3xFe(CN)6(2.5g)+KOH(3g)+H2O(25 ml) provides for the best results for visualization of layers in HES on InP. Treatment in that etchant permits to reveal not only the transition of InP-ternary solution but and boundaries of adjacent regions of InPyAs1-4 with different y
Additional details
Additional titles
- Original title (Russian)
- К методике выявления эпитаксиальных границ в гетерокомпозициях на А
Publishing Information
- Journal Title
- Neorganicheskie Materialy
- Journal Volume
- 29
- Journal Issue
- 12
- Journal Page Range
- p. 1601-1604.
- ISSN
- 0002-337X
- CODEN
- NEOMB8
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26019983
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AQUEOUS SOLUTIONS; EPITAXY; ETCHING; FERRICYANIDES; HETEROJUNCTIONS; INDIUM PHOSPHIDES; PHASE STUDIES; POTASSIUM HYDROXIDES
- Descriptors DEC
- ALKALI METAL COMPOUNDS; COMPLEXES; CRYSTAL GROWTH METHODS; DISPERSIONS; HOMOGENEOUS MIXTURES; HYDROGEN COMPOUNDS; HYDROXIDES; INDIUM COMPOUNDS; IRON COMPLEXES; MIXTURES; OXYGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; POTASSIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SOLUTIONS; TRANSITION ELEMENT COMPLEXES