Published May 1972
| Version v1
Journal article
Distribution of radiation-induced defects in gallium arsenide under deuton irradiation
- 1. Tomskij Gosudarstvennyj Univ. (USSR). Sibirskij Fiziko-Tekhnicheskij Inst.
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Распределение радиационных дефектов в арсениде галлия при облучении дейтонами
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovn.
- Journal Volume
- 6
- Journal Issue
- 5
- Series
- Fiz. Tekh. Poluprovn.
- Journal Page Range
- 865-868
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 4037627
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARSENIDES; CARRIER DENSITY; CARRIER LIFETIME; CASCADE THEORY; CRYSTAL DEFECTS; DEUTERONS; ELECTRON PROBES; GALLIUM COMPOUNDS; MEV RANGE 01-10; N-TYPE CONDUCTORS; RADIATION EFFECTS; RADIOLUMINESCENCE; SPATIAL DISTRIBUTION
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL STRUCTURE; DISTRIBUTION; ENERGY RANGE; LIFETIME; LUMINESCENCE; MEV RANGE; NUCLEI; ODD-ODD NUCLEI; PROBES; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- For English translation see the journal Sov. Phys.-Semicond.