Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures
Creators
- 1. M. N. Miheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences Ekaterinburg 620108 (Russian Federation)
Description
The longitudinal ρxx(B, T) and Hall ρxy(B, T) resistances are experimentally investigated in n-InGaAs/GaAs nanostructures with a single and double quantum wells in the magnetic field range B = 0–2.5 T and temperatures T = 1.8–20 K. It is shown that the origin of the temperature-independent point located at ωcτ ≅ 1 on the ρxx(B, T) curves is due to the combined action of the classical cyclotron motion and the quantum interference effects of weak localization and electron-electron interaction. The results obtained indicate that the transition from the dielectric phase to the phase of the quantum Hall effect is a crossover from weak localization (quantum interference effects in a weak magnetic field) to strong localization in quantizing magnetic fields in the quantum Hall effect regime. (author)
Additional details
Publishing Information
- Journal Title
- Fizika Nizkikh Temperatur
- Journal Volume
- 47
- Journal Issue
- 1
- Journal Page Range
- p. 18-23
- ISSN
- 0132-6414
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 52048531
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTAL STRUCTURE; ELECTRON-ELECTRON INTERACTIONS; GALLIUM ARSENIDES; HALL EFFECT; INDIUM ARSENIDES; INTERFERENCE; MAGNETIC FIELDS; NANOSTRUCTURES; PHASE TRANSFORMATIONS; QUANTUM WELLS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INTERACTIONS; LEPTON-LEPTON INTERACTIONS; NANOSTRUCTURES; PARTICLE INTERACTIONS; PNICTIDES