Quantum modulation of electron dechanneling

An analysis of the experimental and theoretical results obtained from investigations of (1.8 to 5.7) MeV electron channeling along (100), (110), and (111) atomic planes of a Si monocrystal shows that the electron dechanneling rate is modulated by the characteristics of the quantum channeling states, their population and degree of localization. Photometrical measurements of the electronograms of the angular distributions for electrons channeled along (110) atomic planes in a Si crystal are presented and compared with calculated angular distributions. It can be concluded that the probability of close electron-atom interactions which specifies the dechanneling is modulated by characteristics of quantum channeling states