Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices
Creators
- 1. Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
- 2. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China)
- 3. International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
- 4. Center of Materials Research for Low Carbon Emission, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
- 5. Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305–0047 (Japan)
Description
The authors report on the direct integration of high-dielectric constant (high-k) Ta2O5 films on p-type single crystal diamond for high-power electronic devices. Crystallized hexagonal phase δ-Ta2O5 film is achieved on diamond by annealing the amorphous Ta2O5 film deposited by a sputter-deposition technique. The electrical properties of the Ta2O5 thin films are investigated by fabricating metal-insulator-semiconductor (MIS) diodes. The leakage current of the MIS diode is as low as 10−8 A/cm2 for the as-deposited amorphous Ta2O5 film and 10−2 A/cm2 for the crystallized film, which is 108 and 102 times lower than that of the Schottky diode at a forward bias of −3 V, respectively. The dielectric constant of the amorphous Ta2O5 films is measured to be 16 and increases to 29 after annealing at 800 °C. Different current leakage mechanisms and charge trapping behaviors are proposed for the amorphous and crystallized Ta2O5 thin films.
Additional details
Identifiers
- DOI
- 10.1063/1.4770059;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 101
- Journal Issue
- 23
- Journal Page Range
- p. 232907-232907.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44048307
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; BERYLLIUM 16; CRYSTALLIZATION; DEPOSITION; DIAMONDS; DIELECTRIC MATERIALS; ELECTRONIC EQUIPMENT; LEAKAGE CURRENT; METALS; MONOCRYSTALS; PERMITTIVITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SPUTTERING; TANTALUM OXIDES; THIN FILMS; TRAPPING
- Descriptors DEC
- ALKALINE EARTH ISOTOPES; BERYLLIUM ISOTOPES; CARBON; CHALCOGENIDES; CRYSTALS; CURRENTS; DIELECTRIC PROPERTIES; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; EVEN-EVEN NUCLEI; FILMS; HEAT TREATMENTS; ISOTOPES; LIGHT NUCLEI; MATERIALS; MINERALS; NONMETALS; NUCLEI; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2012 American Institute of Physics