Published 2004 | Version v1
Journal article Metadata-only

Investigation of photoelectric properties of ZnSe:Cr and ZnTe:V:Al by picosecond four-wave mixing technique

Creators

  • 1. Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Vilnius (Lithuania)
  • 2. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
  • 3. College of Science, Cardinal S. Wyszynski University, Warsaw (Poland)
  • 4. Institut de Chimie de la Matiere Condense de Bordeaux (ICMB), Pessac (France)

Description

Role of deep impurity levels in carrier generation, transport, and recombination were investigated in bulk ZnSe:Cr and ZnTe:V:Al crystals by four-wave mixing technique. The temporal and exposure dependencies of optical nonlinearities in ZnSe:Cr evidenced an influence of Cr1+/Cr2+ states in carrier generation, exhibited very fast carrier relaxation, and revealed the presence of competing recombination mechanisms. Similar investigations in ZnTe:V:Al showed an effective carrier generation from Al-induced defect complexes as well as fast carrier capture by Zn-vacancies. (author)

Additional details

Publishing Information

Journal Title
Acta Physica Polonica. Series A
Journal Volume
105
Journal Issue
6
Journal Page Range
p. 651-657
ISSN
0587-4246

Conference

Title
33. International School on Physics of Semiconducting Compounds
Dates
28 May - 4 Jun 2004
Place
Jaszowiec (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
36060315
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM ADDITIONS; CHARGE TRANSPORT; CHROMIUM ADDITIONS; DOPED MATERIALS; ENERGY DEPENDENCE; ENERGY LEVELS; EXCITATION; FREQUENCY MIXING; LIFETIME; NONLINEAR OPTICS; PHOTOELECTRIC EFFECT; RECOMBINATION; RELAXATION; VACANCIES; VANADIUM ADDITIONS; ZINC SELENIDES; ZINC TELLURIDES
Descriptors DEC
ALLOYS; ALUMINIUM ALLOYS; CHALCOGENIDES; CHROMIUM ALLOYS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY-LEVEL TRANSITIONS; MATERIALS; OPTICS; POINT DEFECTS; SELENIDES; SELENIUM COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT ALLOYS; VANADIUM ALLOYS; ZINC COMPOUNDS

Optional Information

Contract/Grant/Project number
NATO SAD SPP project SfP-974476; EC contract 5GMA-CT-2002-04047
Notes
17 refs, 4 figs