Published May 19, 2003
| Version v1
Journal article
Impact of stress on oxygen vacancy ordering in epitaxial (La0.5Sr0.5)CoO3-∂ thin films
Creators
- 1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
- 2. International Sematech, Austin, Texas 78741-6499 (United States)
- 3. Department of Physics, University of Houston, Houston Texas 77204-5005 (United States)
Description
We investigate oxygen vacancy ordering in epitaxial (La0.5Sr0.5)CoO3-∂ thin films grown by sputter deposition on (001) LaAlO3 and (001) SrTiO3. After annealing at 500 deg. C under oxygen partial pressures greater than those used during deposition, films transform to a long-range oxygen vacancy ordered structure with orthorhombic symmetry. Observed orientation variants of the oxygen vacancy ordered structures are different for the two substrates. We discuss the relationship between film stress due to lattice and thermal mismatch with the substrate, and vacancy ordering
Additional details
Identifiers
- DOI
- 10.1063/1.1575503;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 82
- Journal Issue
- 20
- Journal Page Range
- p. 3427-3429
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35037698
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANNEALING; COBALT OXIDES; DEPOSITION; EPITAXY; LANTHANUM OXIDES; OXYGEN; SPUTTERING; STRESSES; STRONTIUM OXIDES; SUBSTRATES; SYMMETRY; THIN FILMS; VACANCIES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; COBALT COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELEMENTS; FILMS; HEAT TREATMENTS; LANTHANUM COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; RARE EARTH COMPOUNDS; STRONTIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2003 American Institute of Physics.