Published March 3, 2014 | Version v1
Journal article Metadata-only

Enhancement of thermal stability and water resistance in yttrium-doped GeO2/Ge gate stack

Creators

  • 1. JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)
  • 2. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

Description

We have systematically investigated the material and electrical properties of yttrium-doped GeO2 (Y-GeO2) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO2/Ge stack, compared to that of pure GeO2/Ge stack. The excellent electrical properties of Y-GeO2/Ge stacks with low Dit were presented as well as enhancement of dielectric constant in Y-GeO2 layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO2

Additional details

Identifiers

DOI
10.1063/1.4868032;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
9
Journal Page Range
p. 092909-092909.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45104426
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COMPARATIVE EVALUATIONS; DOPED MATERIALS; FREE ENTHALPY; GERMANIUM; GERMANIUM OXIDES; INTERFACES; LAYERS; PERMITTIVITY; PHASE STABILITY; THICKNESS; YTTRIUM; YTTRIUM COMPOUNDS
Descriptors DEC
CHALCOGENIDES; DIELECTRIC PROPERTIES; DIMENSIONS; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY; EVALUATION; GERMANIUM COMPOUNDS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; STABILITY; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
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