Published May 1986
| Version v1
Journal article
Thermal stability of semiconductor sulfide phases in air
- 1. Institue of Applied Physics, Moldavian SSR Acad. of Sci.
Description
This paper investigates the semiconductor sulfide phases Zn3In2S6, Zn3Ga2S6, and Zn3 GaInS6, produced by chemical transport reactions in a sealed space. A typical derivatogram is shown. Up to 873 K no weight changes appear in the TG curve. As indium atoms are replaced by gallium atoms the kinetic oxidation parameters of the sulfide phases change regularly, and they correlate with the calculated heat of atomization, which characterizes bond strength. The dependence of the temperature of the start of oxidation on composition shows that zinc thiogallate is the most stable when heated in air
Additional details
Publishing Information
- Journal Title
- Inorg. Mater. (Engl. Transl.)
- Journal Volume
- 21
- Journal Issue
- 12
- Series
- Inorg. Mater. (Engl. Transl.).
- Journal Page Range
- 1820-1821
- ISSN
- 0020-1685
- CODEN
- INOMA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18089111
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AIR; ANNEALING; BINDING ENERGY; CHEMICAL ANALYSIS; CHEMICAL REACTIONS; GALLIUM SULFIDES; INDIUM SULFIDES; OXIDATION; PHOTOELECTRIC EFFECT; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; ZINC SULFIDES
- Descriptors DEC
- CHALCOGENIDES; ENERGY; FLUIDS; GALLIUM COMPOUNDS; GASES; HEAT TREATMENTS; INDIUM COMPOUNDS; MATERIALS; SULFIDES; SULFUR COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Notes
- Cover-to-cover translation of Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy (USSR).