Published 1989 | Version v1
Journal article Metadata-only

Superdiffusion of Zn into GaAs in an array of GaAs/Zn/GaAs during electron irradiation at 50oC

Creators

  • 1. Nagoya Inst. of Tech. (Japan)

Description

Zinc atoms were introduced into undoped semi-insulating GaAs at 50oC by using the electron-beam doping (EBD) method. A Zn sheet was sandwiched between two wafers of GaAs, and the surface of GaAs was irradiated with 7 MeV electrons. Before annealing, photoluminescence with a broad peak at 1.48 eV was observed from the GaAs at 77 K, which indicates that the GaAs was not severely damaged. After annealing at 750oC, two strong emissions appeared which are attributed to a Zn acceptor transition, and the band-gap transition. (author) 13 refs., 3 figs

Additional details

Publishing Information

Journal Title
Materials Science Forum
Journal Volume
38-41
Series
Mater. Sci. Forum.
Journal Page Range
735-739
ISSN
0255-5476
CODEN
MSFOE

Conference

Title
15. International conference on defects in semiconductors (ICDS-15).
Dates
22-26 Aug 1988.
Place
Budapest (Hungary).

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
20062134
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CRYSTAL DEFECTS; CRYSTAL DOPING; DIFFUSION; ELECTRONS; GALLIUM ARSENIDES; IMPURITIES; IRRADIATION; PHOTOLUMINESCENCE; ZINC
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; EMISSION; FERMIONS; GALLIUM COMPOUNDS; HEAT TREATMENTS; LEPTONS; LUMINESCENCE; METALS; PHOTON EMISSION