Engineering drag currents in Coulomb coupled quantum dots
Creators
- 1. School of Physics, Korea Institute for Advanced Study, Seoul 130-722 (Korea, Republic of)
- 2. Institute for Cross-Disciplinary Physics and Complex Systems IFISC (UIB-CSIC), E-07122 Palma de Mallorca (Spain)
Description
The Coulomb drag phenomenon in a Coulomb-coupled double quantum dot system is revisited with a simple model that highlights the importance of simultaneous tunneling of electrons. Previously, cotunneling effects on the drag current in mesoscopic setups have been reported both theoretically and experimentally. However, in both cases the sequential tunneling contribution to the drag current was always present unless the drag level position were too far away from resonance. Here, we consider the case of very large Coulomb interaction between the dots, whereby the drag current needs to be assisted by cotunneling events. As a consequence, a quantum coherent drag effect takes place. Further, we demonstrate that by properly engineering the tunneling probabilities using band tailoring it is possible to control the sign of the drag and drive currents, allowing them to flow in parallel or antiparallel directions. We also show that the drag current can be manipulated by varying the drag gate potential and is thus governed by electron- or hole-like transport. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1367-2630/aaac0eAdditional details
Identifiers
Publishing Information
- Journal Title
- New Journal of Physics
- Journal Volume
- 20
- Journal Issue
- 2
- Journal Page Range
- [11 p.]
- ISSN
- 1367-2630
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52031268
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- COULOMB ENERGY; ELECTRONS; ELECTROPHORESIS; HOLES; INTERACTIONS; PROBABILITY; QUANTUM DOTS; TUNNEL EFFECT
- Descriptors DEC
- ELEMENTARY PARTICLES; ENERGY; FERMIONS; LEPTONS; NANOSTRUCTURES