Structural and electrical properties of Cr1-xRuxSb2

Electrical resistivity, Hall coefficient, thermoelectric power, and crystal structure were studied for the pseudo-binary system Cr1-xRuxSb2. The results of powder X-ray diffraction measurements showed that all the prepared samples of Cr1-xRuxSb2 (0≤x≤1) were in a single phase of the orthorhombic marcasite structure. The electrical measurements show that Cr1-xRuxSb2 (0≤x≤1) are all semiconductive in spite of the gradual change of valence electron number by substituting Ru for Cr. It was found that log ρ of the samples for x<0.7 exhibits T-1/2 temperature dependence in certain temperature range. These temperature changes of ρ are the same as those of the variable range hopping (VRH) conduction with Coulomb gap in the impurity conduction range of usual semiconductors