Effect of In incorporation parameters on the electroluminescence of blue–violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

Highlights: ► The interface roughness of InGaN/GaN MQWs are characterized by XRD. ► Smooth interface is very important for the blue–violet InGaN/GaN MQWs. ► EL of InGaN MQWs could be improved by controlling In incorporation parameters. - Abstract: The growth parameters which can modify In incorporation and affect electroluminescence (EL) properties of blue–violet InGaN/GaN multiple quantum wells (MQWs) during metalorganic chemical vapor deposition (MOCVD) are investigated. It is found that a suitable increase of trimethylindium (TMIn) flux during the growth of InGaN well can increase both EL intensity and EL peak wavelength. However, when the growth temperature of well decreases from 810 to 800 °C, the EL intensity decreases although the EL peak wavelength increases. X-ray diffraction results demonstrate that the interface roughness plays an important role in determining the EL intensity of InGaN/GaN MQWs. It is suggested to grow blue–violet MQWs with high structural quality by suitably increasing the TMIn flux and at a relatively high growth temperature.