Published June 1, 1998
| Version v1
Journal article
In view of low-noise and low-power GaAs front-ends
Creators
- 1. INFN, Sezione di Milano, Via Giovanni Celoria 16, 20133, Milano (Italy)
- 2. Politecnico di Milano (Italy). Dipartimento di Elettronica e Informazione
Description
The use of GaAs in front-end electronics for radiation detection systems has been widely investigated by many authors and several prototypes of GaAs front-ends have been proposed. This work is a review and deepening of the criteria for the design of a low noise and low-power GaAs front-end. Remarks on the choice of the optimum bias point and gate width of the input transistor and on the choice of the shaping are discussed. A comparison of several GaAs FETs in terms of low-frequency noise and achievable resolution is also shown. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 410
- Journal Issue
- 1
- Journal Page Range
- p. 124-128
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 5. international workshop on GaAs detectors and related compounds
- Dates
- 17-20 Jun 1997
- Place
- Udine (Italy)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 29051948
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COUNTING CIRCUITS; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; OPTIMIZATION; READOUT SYSTEMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRONIC CIRCUITS; GALLIUM COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- 7 refs.