Recent advancements in 2D-materials interface based magnetic junctions for spintronics

Highlights: • The spin valve effect is reviewed in lateral and vertical magnetic junctions. • Temperature dependence, gate tunability and mechanisms of spin relaxation are studied. • Spin transport mechanism is thoroughly explored by studying the role of different 2D materials. • Spin dependent various parameters such as interface quality and temperature are investigated. Two-dimensional (2D) materials comprising of graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDs) have revealed fascinating properties in various spintronic architectures. Here, we review spin valve effect in lateral and vertical magnetic junctions incorporating 2D materials as non-magnetic layer between ferromagnetic (FM) electrodes. The magnetic field dependent spin transport properties are studied by measuring non-local resistance (R_NL) and relative magnetoresistance ratio (MR) for lateral and vertical structures, respectively. The review consists of (i) studying spin lifetimes and spin diffusion length thereby exploring the effect of tunneling and transparent contacts in lateral spin valve structures, temperature dependence, gate tunability and contrasting mechanisms of spin relaxation in single layer graphene (SLG) and bilayer graphene (BLG) devices. (ii) Perpendicular spin valve devices are thoroughly investigated thereby studying the role of different 2D materials in vertical spin dynamics. The dependence of spin valve signal on interface quality, temperature and various other parameters is also investigated. Furthermore, the spin reversal in graphene-hBN hybrid system is examined on the basis of Julliere model.