Microwave studies on the dielectric properties of Sm3+ and Sm3+/CdTe doped sol-gel silica glasses

Complex permittivity and conductivity studies of Samarium and Samarium/semiconductor cadmium telluride sol-gel silica glass samples were done. We use cavity perturbation technique at S band frequencies using TE10p Mode. Structural evolution of the matrix on annealing is discussed based on FTIR analysis/XRD power diffraction. In cavity perturbation technique dielectric parameters like complex permittivity and conductivity are determined by measuring changes in resonant frequency due to small perturbation inside the cavity produced by the introduction of the samples. The addition of the semiconductor along with the samarium was found to lower the permittivity, loss factor and conductivity. Variations of permittivity values with annealing temperature find applications in IC Technology, optic fibre communication, etc. The Sm3+/CdTe doped glasses can also be used in the fabrication of new and improved materials for microwave electronic circuits and in electromagnetic shielding devices