Published October 2001
| Version v1
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Localization of implanted impurities in silicon
Creators
- 1. Iordan-Al-Balga Applied University, Madaba (Jordan)
- 2. Belaruski dzyarzhawny univ., Minsk (Belarus)
Description
Localization of implanted boron in the Si crystal nodes depending on current ions density was investigated by X-ray diffraction and electrophysical methods. With increase of current ions density localization of boron atoms in the nodes grows that is defined by increase of instantaneous vacancy concentration and suppression of impurity replacement from the nodes by interstitial Si atoms
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Additional details
Additional titles
- Original title (Russian)
- Локализация имплантируемых примесей в кремнии
Publishing Information
- Imprint Place
- Minsk (Belarus)
- ISBN
- 985-445-236-0
- Imprint Title
- Proceedings of the Fourth international conference 'Interaction of radiation with solids'
- Imprint Pagination
- 396 p.
- Journal Page Range
- p. 214-216
- Report number
- INIS-BY--059
Conference
- Title
- 4. international conference 'Interaction of radiation with solids'
- Original Conference Title
- Chetvertaya mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'
- Dates
- 3-5 Oct 2001
- Place
- Minsk (Belarus)
INIS
- Country of Publication
- Belarus
- Country of Input or Organization
- Belarus
- INIS RN
- 32068657
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; BORON IONS; ION IMPLANTATION; KEV RANGE 10-100; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON; VACANCIES; X-RAY DIFFRACTION
- Descriptors DEC
- CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; MATERIALS; POINT DEFECTS; RADIATION EFFECTS; SCATTERING; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- 8 refs., 3 figs. Imprint:Materialy chetvertoj mezhdunarodnoj konferentsii 'Vzaimodejstvie izluchenij s tverdym telom'