Published February 1, 1984
| Version v1
Journal article
Inelastic scattering rate for electrons in thin aluminum films determined from the minimum frequency for microwave stimulation of superconductivity
- 1. Department of Applied Physics, Delft University of Technology, Delft, The Netherlands
Description
A new method for determination of the inelastic scattering rate for electrons in thin films is presented, using the minimum frequency for microwave enhancement of the critical pair-breaking current. Measurements on clean aluminum films with thickness between 144 and 4 nm yield excellent agreement with predictions of Abrahams et al. for electron-electron scattering
Additional details
Publishing Information
- Journal Title
- Phys. Rev., B: Condens. Matter
- Journal Volume
- 29
- Journal Issue
- 3
- Series
- Phys. Rev., B: Condens. Matter.
- Journal Page Range
- 1503-1505
- ISSN
- 0163-1829
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16013205
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM; CRITICAL CURRENT; ELECTRON-ELECTRON COLLISIONS; ELECTRON-PHONON COUPLING; EXPANSION; INELASTIC SCATTERING; MICROWAVE RADIATION; PAIRING ENERGY; SUPERCONDUCTIVITY; THIN FILMS; TIME MEASUREMENT
- Descriptors DEC
- BINDING ENERGY; COLLISIONS; COUPLING; CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRON COLLISIONS; ELEMENTS; ENERGY; FILMS; METALS; PHYSICAL PROPERTIES; RADIATIONS; SCATTERING