Published 2009
| Version v1
Miscellaneous
Optimization of light and electrophysical characteristics of light emitting diode structures based on GaN compounds
- 1. FGUP RFYaTs-VNIITF im. akad. E.I. Zababakhina, Snezhinsk (Russian Federation)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Оптимизация световых и электрофизических характеристик светодиодных структур на основе соединений GaN
Publishing Information
- Publisher
- RFYaTs-VNIIEhF
- Imprint Place
- Sarov (Russian Federation)
- Imprint Title
- Book of abstracts of the VIII scientific and technical conference Young people in science
- Imprint Pagination
- 154 p.
- Journal Page Range
- p. 57
- Report number
- INIS-RU--522
Conference
- Title
- 8. scientific and technical conference on young people in science
- Original Conference Title
- Vos'maya nauchno-tekhnicheskaya konferentsiya Molodezh' v nauke
- Dates
- 10-12 Nov 2009
- Place
- Sarov (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 42105567
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- APPROPRIATE TECHNOLOGY; EPITAXY; GALLIUM NITRIDES; LIGHT EMITTING DIODES; PERFORMANCE
- Descriptors DEC
- CRYSTAL GROWTH METHODS; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Notes
- Imprint:Sbornik annotatsij dokladov Vos'moj nauchno-tekhnicheskoj konferentsii Molodezh' v nauke