Published February 2006 | Version v1
Journal article Metadata-only

Persistent infrared photoconductivity in InAs/GaAs structures with layers of quantum dots

Creators

  • 1. Moskovskij Gosudarstvennyj Univ. im. M.V. Lomonosova, Moscow (Russian Federation)
  • 2. Dept. of Materials Engineering, Ben-Gurion Univ. of the Negev, Beer-Sheva (Israel)

Description

The persistent infrared photoconductivity is investigated in InAs/GaAs layers with quantum dots n- and p-type conductivity. The relaxation of the photoconductivity is logarithmic for some time after switching off the light. The specific relaxation time depends on temperature and decreases with temperature growth. The simple mathematical model of the photoconductivity relaxation, based on the thermal activation of charge carriers from the layer of quantum dots, is proposed. This model agrees with experimental data

Abstract (Russian)

Исследована замороженная инфракрасная фотопроводимость в структурах p- и n-типа проводимости InAs/GaAs со слоями квантовых точек. Затухание фотопроводимости в начальном временном интервале после выключения подсветки происходит по логарифмическому закону. Характерное время релаксации зависит от температуры, уменьшаясь с ростом температуры. Предложена простая математическая модель релаксации фотопроводимости, основанная на термической активации носителей заряда из слоя квантовых точек, которая согласуется с экспериментальными данными

Additional details

Additional titles

Original title (Russian)
Замороженная инфракрасная фотопроводимост' в структурах InAs/GaAs со слоями квантовых точек

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
40
Journal Issue
2
Journal Page Range
p. 215-222
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
38046792
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
BAND THEORY; GALLIUM ARSENIDES; HALL EFFECT; INDIUM ARSENIDES; P-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; QUANTUM DOTS; RELAXATION TIME; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; THEORETICAL DATA; TIME DEPENDENCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; DATA; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; MATERIALS; NANOSTRUCTURES; NUMERICAL DATA; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE

Optional Information

Notes
18 refs., 6 figs.