Published 1989 | Version v1
Book Metadata-only

Properties of electron beam evaporated GaAs thin films

Creators

  • 1. Central Electrochemical Research Inst., Karaikudi (India)

Description

Published in summary form only

Additional details

Publishing Information

Publisher
Department of Atomic Energy.
Imprint Place
Bombay (India)
Imprint Title
Proceedings of the solid state physics symposium (held at) Madras (during) December 19-22, 1989. Vol. 32C
Imprint Pagination
414 p.
Journal Page Range
p. 51.

Conference

Title
Solid state physics symposium.
Dates
19-22 Dec 1989.
Place
Madras (India).

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
22017627
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; EVAPORATION; GALLIUM ARSENIDES; GRAIN SIZE; MICA; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; FILMS; GALLIUM COMPOUNDS; LEPTON BEAMS; MICROSTRUCTURE; MINERALS; PARTICLE BEAMS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; PNICTIDES; SILICATE MINERALS; SIZE