Published December 15, 2015 | Version v1
Journal article

Variation in geometry and electrical conductance properties of asymmetric track-etched single nanopores: How uniform are they?

  • 1. Faculty of Chemistry, Nicolaus Copernicus University, Gagarina Str. 7, 87-100 Torun (Poland)
  • 2. Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, Joliot-Curie Str. 6, 141980 Dubna (Russian Federation)
  • 3. Dubna International University, Universitetskaya Str. 19, 141980 Dubna (Russian Federation)

Description

In this paper, the transport property uniformity of single asymmetric pores in polyethylene terephthalate membranes was investigated. Two types of films, Hostaphan RN and Hostaphan RNK, were used. The foils were irradiated with either single or multiple (∼108 cm−2) Au and Xe ions. Samples were UV-treated and etched in surfactant-doped 5 mol/L NaOH at 60 °C for 6 min and 30 s in order to obtain nanopores with bullet-shaped tips. The geometry of the nanopores was determined from SEM images of multi-pore membrane cross sections. The reproducibility of the electrical characteristics of individual nanopores with bullet-like tips in two different types of polyethylene terephthalate foils was studied. The relationship between electro-conductive properties of the asymmetric nanopores and the polymer morphology is discussed.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nimb.2015.09.072

Additional details

Identifiers

DOI
10.1016/j.nimb.2015.09.072;
PII
S0168-583X(15)00945-3;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
365
Journal Issue
Part B
Journal Page Range
p. 646-650
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
9. international international symposium on swift heavy ions in matter
Acronym
SHIM 2015
Dates
18-21 May 2015
Place
Darmstadt (Germany)

Optional Information

Copyright
Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.