Published 1974 | Version v1
Report Restricted

Phase-transition-like annealing behaviour of heavily implanted GaP

Creators

  • 1. Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.

Description

no abstract available

Availability note (English)

MF available from INIS under the Report Number.

Files

Restricted

The record is publicly accessible, but files are restricted to users with access.

Additional details

Publishing Information

Imprint Pagination
8 p.
Report number
AED-Conf--74-328-010

Conference

Title
International conference on lattice defects in semiconductors.
Dates
22 Jul 1974.
Place
Freiburg, F.R. Germany.

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
6163754
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION; AMORPHOUS STATE; ANNEALING; BACKSCATTERING; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; GALLIUM COMPOUNDS; ION BEAMS; ION IMPLANTATION; KEV RANGE 100-1000; OPTICAL PROPERTIES; ORDER-DISORDER TRANSFORMATIONS; PHOSPHIDES; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE
Descriptors DEC
BEAMS; COHERENT SCATTERING; DIFFRACTION; ELECTRICAL PROPERTIES; ENERGY RANGE; HEAT TREATMENTS; KEV RANGE; PHASE TRANSFORMATIONS; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SCATTERING

Optional Information

Notes
8 figs.; 1 ref. With abstract.