Published January 2010 | Version v1
Journal article Metadata-only

Theoretical analysis of higher-order phonon sidebands in semiconductor luminescence spectra

Creators

  • 1. Department of Physics and Materials Sciences Center, Philipps University Marburg, Renthof 5, 35032 Marburg (Germany)

Description

A semiconductor luminescence formula is derived that includes phonon replica of arbitrary order based on a non-perturbative treatment of the electron-phonon interaction. The formula is used to analyze the extraordinarily strong sidebands observed with ZnO nanorods in recent experiments. Sidebands due to free and impurity-bound excitons are compared, and the generic differences between bulk and quantum-well emission are discussed.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jlumin.2009.07.034

Additional details

Identifiers

DOI
10.1016/j.jlumin.2009.07.034;
PII
S0022-2313(09)00389-5;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
130
Journal Issue
1
Journal Page Range
p. 107-113
ISSN
0022-2313
CODEN
JLUMA8

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41116985
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ELECTRON-PHONON COUPLING; EXCITONS; IMPURITIES; LUMINESCENCE; PHONONS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SPECTRA; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; COUPLING; EMISSION; MATERIALS; NANOSTRUCTURES; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; QUASI PARTICLES; ZINC COMPOUNDS

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.