Published June 1995
| Version v1
Journal article
Investigation on radiation-hardness of GaAs particle detectors
Creators
- 1. Shanghai Jiaotong Univ. (China). Inst. of Microelectronic Technology
Description
The radiation hardness of GaAs Schottky barrier particle detectors has been tested. The leakage current at reverse voltage VR<-150 V is lower than 125 nA. After a 3 MeV electron radiation of 500 kGy, the leakage current is changed to 270 nA at VR = -150 V. It is a promising detector in both high energy and nuclear physics
Additional details
Publishing Information
- Journal Title
- Nuclear Techniques
- Journal Volume
- 18
- Journal Issue
- 6
- Journal Page Range
- p. 374-376.
- ISSN
- 0253-3219
- CODEN
- NUTEDL
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 27011388
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; ELECTRONS; GALLIUM ARSENIDES; LEAKAGE CURRENT; PERFORMANCE TESTING; PHYSICAL RADIATION EFFECTS; SCHOTTKY EFFECT; SEMICONDUCTOR DETECTORS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CURRENTS; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION DETECTORS; RADIATION EFFECTS; TESTING