Correlation of the concentration of the carbon-associated radiation damage levels with the total carbon concentration in silicon

The dominant carbon-related radiation damage center in silicon was studied in detail by deep level transient spectroscopy. Samples with different carbon and oxygen content were implanted with gradually increasing proton fluence. Two energetically closely spaced levels were revealed and tentative identities were assigned. One at E/sub T/+E/sub V/ = 0.344 eV (σ/sub p/ = 1.1 x 10-16 cm2) is assigned as the C+O/sub i/ complex, and that at E/sub T/+E/sub V/ = 0.370 eV (σ/sub p/ = 8 x 10-18 cm2) is assigned as the C/sub s/-Si/sub i/-C/sub s/ complex. It was shown that the concentration of these defects is correlated to the total concentration of carbon in the crystal