Asymptotic diffuse X-ray scattering by silicon-doped GaAs single crystals

Structure defects in silicon-doped (at concentrations 1.7x1019 and 4.5x1019 cm-3) GaAs single crystals grown by the method of vertical directional crystallization have been studied. It is shown that the use of the triple-crystal X-ray diffractometry in the range of the asymptotic diffuse X-ray scattering provides the information on microdefects of various types, sizes, orientations, and symmetries. The specimens cut out from various parts of the ingot along the (001) plane showed the presence of interstitial-type dislocation loops of various dimensions and amorphous clusters. The average dimensions and concentrations of these defects are determined