1/f Noise modeling of InAs/GaSb superlattice mid-wavelength infrared detectors

The empirical 1/f noise model for p${}^{+}$-p-n infrared detector made of type-II InAs/GaSb superlattice material is presented. It is shown that 1/f noise magnitude can be accurately estimated if dark current contributions are determined and noise coefficients are known. It is found that the shunt, the bulk generation–recombination, and the trap-assisted tunneling currents contribute to the total 1/f noise. No 1/f noise connected with the diffusion and the band-to-band tunneling currents is observed.