Published August 15, 1986 | Version v1
Journal article Metadata-only

Energy dissipation processes in scanning tunneling microscopy

Creators

  • 1. Oak Ridge National Laboratory, P.O. Box X, Oak Ridge, Tennessee 37831

Description

Energy dissipation associated with assisted tunneling processes in scanning tunneling microscopy is analyzed and compared with the normal tunnel current. We find that, for high voltages, greater than one volt, the tunneling processes associated with electron-hole pair excitation control the increase in temperature at the microscope's interface

Additional details

Publishing Information

Journal Title
Phys. Rev., B: Condens. Matter
Journal Volume
34
Journal Issue
4
Series
Phys. Rev., B: Condens. Matter.
Journal Page Range
2899-2902
ISSN
0163-1829
CODEN
PRBMD

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
17089952
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ELECTRIC POTENTIAL; ELECTRON-HOLE DROPLETS; ENERGY LOSSES; SCANNING ELECTRON MICROSCOPY; TUNNEL EFFECT
Descriptors DEC
ELECTRON MICROSCOPY; MICROSCOPY