Published April 1, 1987
| Version v1
Journal article
Grain boundary electronic states in some simple ZnO varistors
- 1. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Description
The spatial density and energy distribution of grain boundary electronic states were measured in Bi-Co-ZnO and Pr-Co-Al-ZnO varistors. A large density of trap states was observed 0.6 to 0.7 eV below the conduction-band edge in both compositions. The physical origin of these states is extrinsic and may be attributed to Bi or Pr ions in the boundaries
Additional details
Publishing Information
- Journal Title
- J. Appl. Phys.
- Journal Volume
- 61
- Journal Issue
- 7
- Series
- J. Appl. Phys.
- Journal Page Range
- 2571-2574
- ISSN
- 0021-8979
- CODEN
- JAPIA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18064488
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM; BISMUTH; BISMUTH IONS; COBALT; ELECTRONIC STRUCTURE; GRAIN BOUNDARIES; IMPURITIES; PRASEODYMIUM; PRASEODYMIUM IONS; RESISTORS; TRAPS; ZINC OXIDES
- Descriptors DEC
- ATOMIC IONS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; IONS; METALS; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; RARE EARTHS; TRANSITION ELEMENTS; ZINC COMPOUNDS