Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix

Heterostructures with GaP/GaP1-xNx and GaP/GaP1-x-yAsxNy quantum wells grown by the MOCVD method are studied by methods of capacitance-voltage profiling and capacitive and current deep level transient spectroscopy. In heterostructures with GaP/GaP1-xNx quantum wells, intrinsic defects with deep levels of 0.17 and 0.08 eV are revealed. It is shown that a considerable decrease in the concentration of these defects occurs with the substitution of a ternary GaP1-xNx alloy forming the region of the quantum well by a GaP1-x-yAsxNy quaternary alloy. The nature of emerging defects and mechanisms of decreasing their concentration are discussed.