A partial replacement of gallium atoms with copper, manganese, and indium atoms and its effect on the structure of Ga0.5In1.5S3 polytypic modifications

The compound Ga0.5In1.5S3 can crystallize in different polytypic modifications upon insignificant changes in the synthesis conditions. A partial (33%) replacement of gallium atoms with manganese and copper atoms give rise, respectively, to the 3R(hAcBcAhC) and 2H(hAcBcAhAhC) polytype structures (where A, B, and C designate), respectively, the tetrahedral, octahedral, and empty polyhedral layers; the subscripts h and c denote, respectively, the hexagonal and cubic packings of the sulfur atoms in the anionic layers). The crystals of Ga0.25In1.75S3 are monoclinic; a=6.522, b=3.783, and c=12.621 A; β=99.997 deg