Theoretical analysis of a model for Na+ ion transport in the amorphous silicondioxide layer of MOS structures

The authors introduce and calculate a simple phenomenological transport model for the movement of Na+ ions through the SiO2 layer of MOS structures. The gettering effect achieved by implantation of inert gas ions in the SiO2 layer is linked with the appearance of deep traps for the Na+ ions on the Al-SiO2 interface. The system of balance equations for the charge carriers involved and the Poisson equation for the internal electric field is solved numerically under corresponding boundary and initial conditions, and there is a discussion of the resultant current density-voltage curve. (author)