Double-layer structured hole injection layer to enhance quantum-dot light-emitting diodes
- 1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin, Gyeonggi-do 17104 (Korea, Republic of)
- 2. Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722 (Korea, Republic of)
Description
Highlights: • A double-layer structured hole injection layer was formed using two different PEDOT:PSS. • Quantum-dots light emitting diodes was fabricated using a double layer hole injection layer. • Double-layer structured hole injection layer improved the hole injection characteristics. • The origin of the improvement was analyzed using photoelectron spectroscopy. • Density of states of PEDOT:PSS was increased with highly conductive PEDOT:PSS. -- Abstract: Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is a commonly used hole injection layer (HIL) in quantum-dot light-emitting diodes (QLEDs). In this study, we investigated a double-layer structured HIL based on PEDOT:PSS to improve the hole injection for high-performance QLEDs. Two different types of PEDOT:PSS, having different conductivities, were used to form a double-layer structured HIL, and we observed improved hole injection behavior of the device. The origin of the enhanced hole injection was investigated using ultraviolet and X-ray photoelectron spectroscopy. We found that the density of state for the hole injection and transport was increased at the HIL when we formed a double-layer structured HIL for the device, compared to the QLEDs with a single layer PEDOT:PSS HIL. Therefore, high-performance QLEDs were fabricated using a double-layer structured HIL, and the maximum luminance and luminous efficiency of the devices were measured as 53,109 Cd/m2 and 2.1 Cd/A, respectively. Our results suggest that a double-layer structured HIL based on PEDOT:PSS is a suitable HIL to improve QLEDs.
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2019.137444;
- PII
- S0040609019304729;
Publishing Information
- Journal Title
- Thin Solid Films (Print)
- Journal Volume
- 687
- Journal Page Range
- vp.
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55041482
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DENSITY OF STATES; LAYERS; LIGHT EMITTING DIODES; QUANTUM DOTS; ULTRAVIOLET RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; NANOSTRUCTURES; PHOTOELECTRON SPECTROSCOPY; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2019 Elsevier B.V. All rights reserved.