Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment

The effect of thermal annealing in the temperature range 800 ⩽ T_ann ⩽ 1200°C and of two cooling rates (v_cl = 1 and 15°C min^–1) upon a change in the concentration of charge carriers in the conduction band, their mobility, and tensoresistance in n-Si crystals doped by nuclear transmutation and doped with phosphorus impurity via the melt (during growth by the Czochralski method) was investigated. It is found that, after annealing of all of the crystals at T_ann = 1050–1100°C, the concentration of charge carriers is increased by a factor of 1.3–1.7 compared to the initial concentration (irrespective of the method of doping). The specific annealing-temperature-dependent effect of cooling with a rate of 15°C min^–1 on the properties of transmutation-doped n-Si:P crystals is detected.