Published February 18, 2009 | Version v1
Journal article

Microphotoluminescence spectroscopy of single CdTe/ZnTe quantum dots grown on Si(001) substrates

  • 1. Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden (Germany)
  • 2. Advanced Semiconductor Research Center, Division of Electronics and Computer engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)
  • 3. Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)

Description

We have studied the emission properties of single CdTe/ZnTe quantum dots (QDs) grown on Si(001) substrates by using molecular beam epitaxy and atomic layer epitaxy. The good quality of the QDs is attested by the resolution-limited emission, negligible background and absence of measurable spectral jitter or blinking. Power-dependent, polarization-dependent, and temperature-dependent microphotoluminescence spectroscopy measurements were performed to identify the exciton, the biexciton, and two oppositely charged excitons in the emission spectra of single QDs.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/20/7/075705

Additional details

Identifiers

DOI
10.1088/0957-4484/20/7/075705;
PII
S0957-4484(09)91598-7;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
20
Journal Issue
7
Journal Page Range
[5 p.]
ISSN
0957-4484