Published 2002 | Version v1
Miscellaneous

Effect of gamma radiation onto the properties of TeO2 thin films

  • 1. Electric and Computer Engineering Department, University of Limerick, Limerick (Ireland)

Description

The effects of γ-radiation on both optical and electrical properties of tellurium oxide (TeO2) thin films were investigated. TeO2 thin films were fabricated using thermal vacuum deposition method. Samples were exposed to a 60Co γ-radiation source with a dose rate of 6 Gy/min. Absorption spectra for TeO2 thin films were recorded and values of the optical band gap for as-deposited and γ-irradiated films were calculated. Sets of measurements based on Hall effect were carried out. From the data received the dependences of sheet resistance, density of charge carriers, mobility and Hall coefficient with radiation dose were determined. (author)

Part of:
Proceedings of European Microelectronics Packaging and Interconnection Symposium

Additional details

Publishing Information

Imprint Title
Proceedings of European Microelectronics Packaging and Interconnection Symposium
Imprint Pagination
428 p.
Journal Page Range
p. 201-206

Conference

Title
European Microelectronics Packaging and Interconnection Symposium
Dates
16-18 Jun 2002
Place
Cracow (Poland)

Optional Information

Contract/Grant/Project number
EIDF RADSENAD Project Ref. PRP00/AMT/06
Notes
21 refs, 7 figs